- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
0000000002000000
- More
- Availability
-
20
- Author / Contributor
- Filter by Author / Creator
-
-
Hoffmann, Michael (2)
-
Mikolajick, Thomas (2)
-
Slesazeck, Stefan (2)
-
Alcala, Ruben (1)
-
Antoniadis, Dimitri (1)
-
Avci, Uygar E. (1)
-
Barrett, Nick (1)
-
Borg, Mattias (1)
-
Byun, Seungyong (1)
-
Bégon-Lours, Laura (1)
-
Chang, Sou-Chi (1)
-
Cheong, Sang-Wook (1)
-
Chern, Winston (1)
-
Choe, Duk-Hyun (1)
-
Clark, Robert (1)
-
Coignus, Jean (1)
-
Consiglio, Steven (1)
-
Deshpande, Veeresh (1)
-
Dimoulas, Athanasios (1)
-
Dopita, Milan (1)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Sahin. I. (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.more » « less
-
Hoffmann, Michael; Wang, Zheng; Tasneem, Nujhat; Zubair, Ahmad; Ravindran, Prasanna Venkatesan; Tian, Mengkun; Gaskell, Anthony Arthur; Triyoso, Dina; Consiglio, Steven; Tapily, Kandabara; et al (, Nature Communications)Abstract Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO2and ZrO2) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO2gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO2and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.more » « less
An official website of the United States government
